Characterization of Oxidation Induced Stacking Fault in SiGe/Si Seed Stack
نویسندگان
چکیده
Stacking fault formation during epitaxial SiGe layer growth in bipolar complementary metal oxide semiconductor (BiCMOS) process which caused high yield loss due to its leakage current on bipolar transistors has been studied. Through the analysis of process flow, oxidation induced stacking faults were indicated as a possible root cause of the yield loss. The identification of the oxidation induced stacking fault mechanism and understanding of its process dependency are very critical to improve the yield and obtain fast ramp-up. This paper includes the comprehensive characterization of oxidation induced stacking fault mechanisms in SiGe-based BiCMOS devices.
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